• DocumentCode
    3084815
  • Title

    A self-compliance RRAM device for high density cross-point array applications

  • Author

    Feiyang Huang ; Huaqiang Wu ; Xinyi Li

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    RRAM devices with AlOδ/Ta2O5-x/TaOy triple-layer structure were fabricated and electrically characterized. DC sweeping measurements without external current compliance were carried out at temperatures ranging from -10°C to 110°C. Stable self-compliance property was observed. More than 1010 cycles pulse programming operations without external current limit element were demonstrated. Those cells showed no data retention deterioration for more than 3 hours at 150°C.
  • Keywords
    aluminium compounds; resistive RAM; tantalum compounds; AlOδ-Ta2O5-x-TaOy; DC sweeping measurement; current limit element; data retention deterioration; external current compliance; high density crosspoint array application; pulse programming; resistive random access memory; self-compliance RRAM device; temperature -10 C to 110 C; triple-layer structure; Current measurement; Performance evaluation; Thickness measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153328
  • Filename
    7153328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3084815