MOCVD TiN diffusion barriers for copper interconnects

Author

Choe, H.S. ; Danek, M.

Author_Institution

Novellus Syst. Inc., San Jose, CA, USA

fYear

1999

fDate

1999

Firstpage

62

Lastpage

64

Abstract

Copper barrier effectiveness of ultra-thin 100 Å MOCVD titanium nitride (TiN) and silane treated titanium nitride (TiN:Si) films was investigated and compared to the industry standard 150 Å PVD Ta barrier. The metallurgical stability of the film and barrier failure was determined by sheet resistance change, optical and electron microscopy after Secco etch and C-V measurements. Copper drift through the barrier was tested under bias temperature stress conditions (200°C and 2 MV/cm) using leakage current vs. time measurement on MOS capacitors

Keywords

MOCVD; MOS capacitors; capacitance; chemical interdiffusion; copper; diffusion barriers; electric resistance; electron microscopy; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; leakage currents; optical microscopy; thermal stresses; titanium compounds; vapour phase epitaxial growth; 100 angstrom; 150 angstrom; 200 C; C-V measurements; Cu-Ta; Cu-TiN; Cu-TiN:Si; MOCVD TiN diffusion barriers; MOCVD TiN films; MOCVD TiN:Si films; MOCVD silane treated titanium nitride films; MOCVD titanium nitride films; MOS capacitors; PVD Ta barrier; Secco etch; barrier failure; bias temperature stress conditions; copper barrier effectiveness; copper drift; copper interconnects; electron microscopy; leakage current; metallurgical stability; optical microscopy; sheet resistance; time measurement; Atherosclerosis; Copper; Electron optics; MOCVD; Metals industry; Optical films; Optical microscopy; Stability; Tin; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787079

Filename

787079