Title :
Synthesis of high-transmittance zinc oxide by oxidation of evaporated zinc films
Author :
Jiesheng Zhang ; Iwamaru, Koji ; Nakamura, Kentaro
Author_Institution :
Dept. of Electr. & Electron. Eng., Kansai Univ., Suita, Japan
Abstract :
ZnO films were prepared on glass substrates by two different methods. One is a spin-coating method followed by annealing in oxygen gas. The other is an evaporation of zinc metal followed by oxidation. The crystal structure was characterized by X-ray diffraction. The optical transmittance was recorded by a spectrophotometer in the visible range (400-800nm). It was found that the normalized optical transmittances of the ZnO films prepared using vacuum evaporation method were over 90% which were much larger than those of the films using spin-coating method.
Keywords :
II-VI semiconductors; X-ray diffraction; crystal structure; oxidation; semiconductor thin films; spin coating; vacuum deposition; visible spectra; wide band gap semiconductors; zinc compounds; SiO2; X-ray diffraction; ZnO; annealing; crystal structure; evaporated zinc films; glass substrates; high-transmittance zinc oxide; optical transmittance; oxidation; oxygen gas; spin-coating method; vacuum evaporation; visible spectroscopy; Annealing; Optical diffraction; Optical films; Zinc oxide; ZnO; evaporation; transmittance;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602255
