Synthesis of high-transmittance zinc oxide by oxidation of evaporated zinc films

Author

Jiesheng Zhang ; Iwamaru, Koji ; Nakamura, Kentaro

Author_Institution

Dept. of Electr. & Electron. Eng., Kansai Univ., Suita, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

92

Lastpage

95

Abstract

ZnO films were prepared on glass substrates by two different methods. One is a spin-coating method followed by annealing in oxygen gas. The other is an evaporation of zinc metal followed by oxidation. The crystal structure was characterized by X-ray diffraction. The optical transmittance was recorded by a spectrophotometer in the visible range (400-800nm). It was found that the normalized optical transmittances of the ZnO films prepared using vacuum evaporation method were over 90% which were much larger than those of the films using spin-coating method.

Keywords

II-VI semiconductors; X-ray diffraction; crystal structure; oxidation; semiconductor thin films; spin coating; vacuum deposition; visible spectra; wide band gap semiconductors; zinc compounds; SiO₂; X-ray diffraction; ZnO; annealing; crystal structure; evaporated zinc films; glass substrates; high-transmittance zinc oxide; optical transmittance; oxidation; oxygen gas; spin-coating method; vacuum evaporation; visible spectroscopy; Annealing; Optical diffraction; Optical films; Zinc oxide; ZnO; evaporation; transmittance;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602255

Filename

6602255