DocumentCode
3084860
Title
MEMS microphones on InP substrates for high performance digital ultrasonic sensors
Author
Fujino, Shunya ; Mizuno, Yosuke ; Takaoka, Kazuhiro ; Mori, Marco ; Maezawa, K.
Author_Institution
Grad. Sch. of Sci. & Eng., Univ. of Toyama, Toyama, Japan
fYear
2013
fDate
5-6 June 2013
Firstpage
96
Lastpage
97
Abstract
This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone ashing of the photoresist to fabricate a hollow structure. This process was demonstrated to be damage-free, and suitable for integration with HEMTs.
Keywords
III-V semiconductors; analogue-digital conversion; delta-sigma modulation; high electron mobility transistors; indium compounds; microphones; microsensors; photoresists; ultrasonic transducers; HEMT; InP; InP substrates; MEMS microphones; digital ultrasonic sensors; hollow structure; ozone ashing; photoresist; Frequency modulation; HEMTs; Indium phosphide; MODFETs; Micromechanical devices; Microphones; Sensors; InP; analog-to-digital converter; condenser microphone; delta-sigma modulation; high electron mobility transistor; ultrasonic sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location
Suita
Print_ISBN
978-1-4673-6106-4
Type
conf
DOI
10.1109/IMFEDK.2013.6602256
Filename
6602256
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