DocumentCode :
3084872
Title :
An investigation of CeO2 based ReRAM with p+ and n+-Si bottom electrodes
Author :
Jin, J. ; Kakushima, K. ; Kataoka, Y. ; Nishiyama, A. ; Sugii, N. ; Wakabayashi, H. ; Tsutsui, K. ; Natori, K. ; Iwai, H.
Author_Institution :
Tokyo Tech. FRC, Tokyo, Japan
fYear :
2015
fDate :
15-16 March 2015
Firstpage :
1
Lastpage :
2
Abstract :
In this paper we use the p+-Si and n+-Si as bottom electrode for CeO2 based ReRAM. The work function difference between p+-Si and n+-Si substrate gives out an about 0.6 V shift of the set and reset voltage. The mechanism of this shift was investigated and the set and reset of voltage with pulse width dependence was also concerned depends on p+-Si substrate.
Keywords :
cerium compounds; electrodes; resistive RAM; silicon; CeO2; ReRAM; Si; bottom electrode; pulse width dependence; reset voltage; resistive random access memory; set voltage; Electric potential; Electrodes; Histograms; Programming; Reliability; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
ISSN :
2158-2297
Type :
conf
DOI :
10.1109/CSTIC.2015.7153330
Filename :
7153330
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3084872
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