• DocumentCode
    3084872
  • Title

    An investigation of CeO2 based ReRAM with p+ and n+-Si bottom electrodes

  • Author

    Jin, J. ; Kakushima, K. ; Kataoka, Y. ; Nishiyama, A. ; Sugii, N. ; Wakabayashi, H. ; Tsutsui, K. ; Natori, K. ; Iwai, H.

  • Author_Institution
    Tokyo Tech. FRC, Tokyo, Japan
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper we use the p+-Si and n+-Si as bottom electrode for CeO2 based ReRAM. The work function difference between p+-Si and n+-Si substrate gives out an about 0.6 V shift of the set and reset voltage. The mechanism of this shift was investigated and the set and reset of voltage with pulse width dependence was also concerned depends on p+-Si substrate.
  • Keywords
    cerium compounds; electrodes; resistive RAM; silicon; CeO2; ReRAM; Si; bottom electrode; pulse width dependence; reset voltage; resistive random access memory; set voltage; Electric potential; Electrodes; Histograms; Programming; Reliability; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153330
  • Filename
    7153330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3084872