Copper post-CMP brush cleaning

Author

Elbel, Norbert ; Wang, Shumin ; Sänger, Annette ; Hadawi, Dariusch ; Held, Chuck

Author_Institution

Siemens AG, Munich, Germany

fYear

1999

fDate

1999

Firstpage

80

Lastpage

82

Abstract

Both metallic and abrasive particle cleaning after Cu CMP processing was studied. Two chemical (citric acid and K₂-EDTA) based cleaning systems were evaluated as functions of concentration and pH. Results of <5×10¹⁰ at/cm ² for Cu contamination were achieved with both optimized systems. Cu was presented on the wafer surface in the form of a homogeneous film, yet alumina was detected in both localized particle and thin film form. No Cu corrosion or surface roughening were detected after the cleaning process

Keywords

copper; corrosion; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; surface cleaning; surface contamination; surface topography; Al₂O₃-SiO₂; Cu; Cu CMP processing; Cu contamination; Cu corrosion; Cu homogeneous film; Cu post-CMP brush cleaning; Cu surface roughening; Cu-SiO₂; K₂-EDTA based cleaning system; SiO₂; abrasive particle cleaning; alumina localized particles; alumina thin films; citric acid based cleaning system; cleaning solution concentration; cleaning solution pH; copper post-CMP brush cleaning; metallic particle cleaning; optimized systems; wafer surface; Abrasives; Brushes; Chemicals; Cleaning; Copper; Corrosion; Rough surfaces; Surface contamination; Surface roughness; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787084

Filename

787084