Title :
Extended Abstracts of the Fourth International Workshop on Junction Technology (IEEE Cat. No.04EX762)
Abstract :
The following topics were discussed: advanced doping and annealing technology; ultra-shallow junction formation and characterization; silicides and contact technology for CMOS; junction technology for compound semiconductor devices; Si-based novel materials; structures and devices and modeling/simulation.
Keywords :
CMOS integrated circuits; annealing; integrated circuit modelling; semiconductor device models; semiconductor devices; semiconductor doping; semiconductor junctions; semiconductor technology; CMOS; Si-based novel materials; annealing technology; contact technology; doping technology; modeling; silicides; simulation; ultra-shallow junction formation;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Conference_Location :
Shanghai, China
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306735
