Title :
Modeling on hydrodynamic effects of pad surface roughness in CMP process
Author :
Nishioka, Takeshi ; Sekine, Kunio ; Tateyama, Yoshikuni
Author_Institution :
Mech. Syst. Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
A model of pad surface roughness is proposed, in order to estimate the hydrodynamic pressure of slurry in the CMP process. Measurements of the friction coefficient between wafers and pads show good agreement with the model at high viscosity and high speed conditions, wherein the hydrodynamic pressure is dominant. This model should be useful for understanding of the contact mechanism between the wafers, the pads and the abrasives in CMP processes
Keywords :
abrasion; chemical mechanical polishing; friction; semiconductor process modelling; surface topography; viscosity; CMP process; CMP processes; abrasives; contact mechanism; high speed conditions; hydrodynamic effects modeling; hydrodynamic pressure; pad surface roughness; pad surface roughness model; slurry; viscosity; wafer-pad friction coefficient; Abrasives; Friction; Hydrodynamics; Pressure measurement; Rough surfaces; Semiconductor device modeling; Slurries; Surface roughness; Velocity measurement; Viscosity;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787087
