Modeling on hydrodynamic effects of pad surface roughness in CMP process

Author

Nishioka, Takeshi ; Sekine, Kunio ; Tateyama, Yoshikuni

Author_Institution

Mech. Syst. Res. Labs., Toshiba Corp., Kawasaki, Japan

fYear

1999

fDate

1999

Firstpage

89

Lastpage

91

Abstract

A model of pad surface roughness is proposed, in order to estimate the hydrodynamic pressure of slurry in the CMP process. Measurements of the friction coefficient between wafers and pads show good agreement with the model at high viscosity and high speed conditions, wherein the hydrodynamic pressure is dominant. This model should be useful for understanding of the contact mechanism between the wafers, the pads and the abrasives in CMP processes

Keywords

abrasion; chemical mechanical polishing; friction; semiconductor process modelling; surface topography; viscosity; CMP process; CMP processes; abrasives; contact mechanism; high speed conditions; hydrodynamic effects modeling; hydrodynamic pressure; pad surface roughness; pad surface roughness model; slurry; viscosity; wafer-pad friction coefficient; Abrasives; Friction; Hydrodynamics; Pressure measurement; Rough surfaces; Semiconductor device modeling; Slurries; Surface roughness; Velocity measurement; Viscosity;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787087

Filename

787087