Title :
A new pad-scanning, local-CMP (PASCAL-CMP) technique for reliable Cu-damascene interconnect formation
Author :
Hayashi, Y. ; Onodera, T. ; Sasaki, N. ; Tanaka, K. ; Samitu, Y.
Author_Institution :
ULSI Res. Lab., NEC Corp., Sagamihara, Japan
Abstract :
A new pad-scanning, local-CMP (PASCAL-CMP) with an index-table wafer transfer system has been developed for Cu damascene interconnect formation. In the CMP process, a small oval pad is scanned on the face-up wafer. High-speed pad rotation under low polishing pressure is the key factor for suppression of Cu film thinning by oxide erosion and Cu dishing, resulting in reliable wide-range Cu interconnects
Keywords :
ULSI; abrasion; chemical mechanical polishing; copper; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; CMP process; Cu; Cu damascene interconnect formation; PASCAL-CMP technique; SiO2; face-up wafer; high-speed pad rotation; index-table wafer transfer system; oval pad scanning; pad-scanning local-CMP technique; polishing pressure; reliable Cu-damascene interconnect formation; Automatic control; Cleaning; Control systems; Delay; Face detection; Machine tools; National electric code; Pressure control; Silicon; Ultra large scale integration;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787090
