Title :
Post etch cleaning of dual damascene system integrating copper and SiLKTM
Author :
Louis, D. ; Peyne, C. ; Arvet, C. ; Lajoinie, E. ; Maloney, D. ; Lee, S.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
This work presents an approach to the cleaning process for the integration of copper and SiLKTM in a dual damascene structure. This paper addresses some problems of post etch residue removal and copper contamination, as well as a wet only process for resist removal with exposed SiLKTM
Keywords :
copper; dielectric thin films; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; organic compounds; permittivity; surface cleaning; surface contamination; Cu; cleaning process; copper contamination; copper-SiLK dual damascene structure; copper/SiLK integration; dual damascene system; exposed SiLK; post etch cleaning; post etch residue removal; resist removal; wet clean-only process; Chemical technology; Cleaning; Contamination; Copper; Dielectrics; Hafnium; Lithography; Plasma applications; Resists; Wet etching;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787091
