DocumentCode
3085078
Title
Cu interconnect technologies in Fujitsu and problems in installing Cu equipment in an existing semiconductor manufacturing line
Author
Yamada, Masao ; Yagi, Haruyosi ; Sugatani, Shinji ; Miyajima, Motosu ; Matsunaga, Daisuke ; Hosoda, Tsutomu ; Kudo, Hiroshi ; Misawa, Nobuhiro ; Nakamura, Tomoji
Author_Institution
ULSI Dev. Div., Fujitsu Ltd., Japan
fYear
1999
fDate
1999
Firstpage
115
Abstract
Summary form only given. In this paper, Cu interconnect technologies in Fujitsu targeted for the 0.18 μm generation and beyond are introduced. Some new integration schemes for Cu wiring are also demonstrated, targeted for the 0.13 μm generation. Finally, we discuss some important aspects of installation of Cu equipment in an existing semiconductor manufacturing line
Keywords
copper; integrated circuit design; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; 0.13 micron; 0.18 micron; Cu; Cu equipment; Cu equipment installation; Cu interconnect technology; Cu wiring integration schemes; semiconductor manufacturing line; High K dielectric materials; High-K gate dielectrics; Laboratories; Manufacturing; Microprocessors; Semiconductor device manufacture; Semiconductor materials; Ultra large scale integration; Wiring; Yagi-Uda antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology, 1999. IEEE International Conference
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-5174-6
Type
conf
DOI
10.1109/IITC.1999.787094
Filename
787094
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