Title :
Highly <111> textured Cu film formation on CVD-TiN film by Ti underlayer and Ar sputter etch for damascene interconnection
Author :
Sekiguchi, Mitsuru ; Sato, Haruhiko ; Harada, Takeshi ; Etoh, Ryuji
Author_Institution :
ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan
Abstract :
Highly (111)-oriented texture and high wetting of Cu films on CVD-TiN films are achieved by use of a (002)-oriented sputtered Ti underlayer and an Ar sputter etch before Ti deposition. This process enhances (111)-oriented crystallization of the amorphous CVD-TiN film. As a result, ⟨111⟩ texture and wetting of Cu films are as same as those of Cu on Ta films. Cu films with a damascene structure also show a highly (111)-oriented texture
Keywords :
argon; chemical interdiffusion; copper; crystallisation; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; sputter etching; surface texture; titanium; titanium compounds; wetting; Ar; Ar sputter etch; CVD-TiN film; CVD-TiN films; Cu films; Cu-TiN-Ti; Cu<111> texture; Ti deposition; Ti underlayer; TiN(111)-oriented crystallization; amorphous CVD-TiN film; damascene interconnection; damascene structure; highly (111)-oriented texture; highly <111> textured Cu film formation; wetting; Amorphous materials; Argon; Crystallization; Plasma applications; Plasma density; Sputter etching; Sputtering; Surface treatment; Wet etching; X-ray scattering;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787095
