Highly <111> textured Cu film formation on CVD-TiN film by Ti underlayer and Ar sputter etch for damascene interconnection

Author

Sekiguchi, Mitsuru ; Sato, Haruhiko ; Harada, Takeshi ; Etoh, Ryuji

Author_Institution

ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan

fYear

1999

fDate

26-26 May 1999

Firstpage

116

Lastpage

118

Abstract

Highly (111)-oriented texture and high wetting of Cu films on CVD-TiN films are achieved by use of a (002)-oriented sputtered Ti underlayer and an Ar sputter etch before Ti deposition. This process enhances (111)-oriented crystallization of the amorphous CVD-TiN film. As a result, ⟨111⟩ texture and wetting of Cu films are as same as those of Cu on Ta films. Cu films with a damascene structure also show a highly (111)-oriented texture

Keywords

argon; chemical interdiffusion; copper; crystallisation; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; sputter etching; surface texture; titanium; titanium compounds; wetting; Ar; Ar sputter etch; CVD-TiN film; CVD-TiN films; Cu films; Cu-TiN-Ti; Cu<111> texture; Ti deposition; Ti underlayer; TiN(111)-oriented crystallization; amorphous CVD-TiN film; damascene interconnection; damascene structure; highly (111)-oriented texture; highly <111> textured Cu film formation; wetting; Amorphous materials; Argon; Crystallization; Plasma applications; Plasma density; Sputter etching; Sputtering; Surface treatment; Wet etching; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787095

Filename

787095