Title :
CVD TaN barrier for copper metallization and DRAM bottom electrode
Author :
Paranjpe, Ajit ; Bubber, Randhir ; Velo, Lino ; Shang, Guihua ; Gopinath, Sanjay ; Dalton, Jeremie ; Moslehi, Mehrdad
Author_Institution :
CVC Inc., Fremont, CA, USA
Abstract :
The extendibility of PVD barriers is expected to become a limiting factor for 0.13 μm copper metallization, and an MOCVD barrier is likely to be indispensable due to its superior conformality. A 400°C process for deposition of a nanocrystalline conformal (>85%) MOCVD TaN layer in high aspect ratio (AR>5) trenches/vias with barrier properties equivalent to c-PVD TaN has been developed using a liquid organometallic precursor. This enables barrier thickness to be scaled to <125 Å compared to >250 Å for i-PVD TaN. Resistivity of ~1000 μΩ-cm has been achieved, which can be further reduced through barrier engineering. MOCVD TaN is a key enabler for extendibility of copper metallization to the sub-0.13 μm technology node
Keywords :
DRAM chips; MOCVD; chemical interdiffusion; conformal coatings; copper; diffusion barriers; electrical resistivity; integrated circuit interconnections; integrated circuit metallisation; tantalum compounds; vapour phase epitaxial growth; 0.13 micron; 1000 muohmcm; 125 angstrom; 250 angstrom; 400 C; CVD TaN barrier; Cu-TaN; DRAM bottom electrode; MOCVD TaN; MOCVD barrier; PVD barriers; barrier engineering; barrier properties; barrier thickness scaling; c-PVD TaN; conformality; copper metallization; i-PVD TaN; liquid organometallic precursor; nanocrystalline conformal MOCVD TaN layer; resistivity; technology node; trench aspect ratio; via aspect ratio; Atherosclerosis; Copper; Crystallization; Electrodes; MOCVD; Metallization; Microstructure; Random access memory; Temperature; Throughput;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787096
