Title :
Evaluation of TaOx nanoparitcles for resistive random access memory
Author :
Kado, Keisuke ; Ban, Toshinori ; Uenuma, Mutsunori ; Ishikawa, Yozo ; Yamashita, Ichiro ; Uraoka, Y.
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol. (NAIST), Ikoma, Japan
Abstract :
We demonstrated a resistive memory using TaOx nanoparticles (NPs) utilizing Bio Nano Process (BNP). TaOx NPs were produced by ferritin proteins. The ReRAM with TaOx NPs exhibits resistive switching behavior evaluated by conductive atomic force microscopy. This result indicates that TaOx nano-ReRAM utilizing BNP can be a high-density non-volatile memory.
Keywords :
atomic force microscopy; proteins; random-access storage; tantalum compounds; ReRAM; TaO; atomic force microscopy; bio nano process; ferritin proteins; nanoparitcles; nonvolatile memory; resistive random access memory; resistive switching; Switches; Tin; BNP; Ferritin protein; Nanoparticle; ReRAM; TaOx;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602273
