Recent development of nitride semiconductor electronic devices for next generation wireless communications

Author

Nanishi, Yasushi

Author_Institution

Dept. of Photonics, Ritsumeikan Univ., Shiga, Japan

fYear

2004

fDate

15-16 March 2004

Firstpage

12

Lastpage

17

Abstract

This paper reviews potential and present status of AlGaN/GaN HFETs. High potential of these devices for high-power and high-frequency operation are explained from the physical properties of GaN and AlGaN/GaN hetero-structures. Present status of theses device performances are briefly introduced. Over 150 W operation at 2 GHz and 3.2 W operation at 30 GHz has been already achieved so far, verifying high-potential of this :material system. Issues for further improvements of these device performances as well as issues for production level technology are discussed.

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; telecommunication equipment; wide band gap semiconductors; 150 W; 2 GHz; 3.2 W; 30 GHz; AlGaN-GaN; AlGaN/GaN HFETs; high-frequency operation; high-power operation; next generation wireless communications; nitride semiconductor electronic devices; Conducting materials; Electric breakdown; Gallium nitride; HEMTs; MODFETs; Production; Research and development; Semiconductor materials; Thermal conductivity; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306747

Filename

1306747