A manufacturable and reliable low-k inter-metal dielectric using fluorinated oxide (FSG)

Author

Chang, W. ; Jang, S.M. ; Yu, C.H. ; Sun, S.C. ; Liang, M.S.

Author_Institution

Res. & Dev., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

1999

fDate

1999

Firstpage

131

Lastpage

133

Abstract

A manufacturable and reliable low-k intermetal dielectric (IMD) using FSG is demonstrated. Film properties such as thickness, refractive index, stress and fluorine content and their thermal stability have been characterized. Dependency of line-to-line capacitance, via contact resistance (R_c), and hot carrier reliability on FSG based IMD schemes are compared. We conclude that a simple, full FSG IMD with lower F content (4.7%) without undoped oxide (USG) as under- or cap-layer is feasible to achieve best interconnect performance with excellent thermal stability. Various product reliability tests demonstrate that the FSG IMD is highly reliable

Keywords

capacitance; contact resistance; dielectric thin films; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; internal stresses; permittivity; refractive index; silicon compounds; thermal stability; F content; FSG ILD film; FSG based IMD; SiOF-Si; film fluorine content; film properties; film refractive index; film stress; film thickness; fluorinated oxide ILD film; hot carrier reliability; interconnect performance; line-to-line capacitance; low-k IMD; low-k inter-metal dielectric; manufacturable low-k inter-metal dielectric; product reliability tests; reliable low-k inter-metal dielectric; thermal stability; undoped oxide cap-layer; undoped oxide underlayer; via contact resistance; Capacitance; Contact resistance; Dielectrics; Hot carriers; Manufacturing; Optical films; Refractive index; Testing; Thermal stability; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787099

Filename

787099