Title :
Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization
Author :
Cho, Byung Jin ; Poon, Debora ; Tan, Leng Seow ; Bhat, Mousumi ; See, Alex
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Advantages of multiple-pulse Laser Thermal Annealing (LTA) with a moderate energy fluence on preamorphized silicon are described. Re-distribution of laser annealed boron junction during subsequent RTA is also studied. A method to optimize the multiple-pulse LTA condition is proposed. It is also demonstrated that Hall analysis can be used as a quick evaluation tool of the integrity of the junctions.
Keywords :
amorphous semiconductors; boron; elemental semiconductors; ion implantation; laser beam annealing; rapid thermal annealing; silicon; Hall analysis; Si:B; moderate energy fluence; multiple-pulse laser annealing; preamorphized Si:B; process optimization; Amorphous materials; Annealing; Boron; Crystallization; Laser modes; Optical pulses; Pulse measurements; Semiconductor lasers; Silicon; Solids;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306749
