Post etch residue removal: novel dry clean technology using densified fluid cleaning (DFC)

Author

Beery, Dafna ; Reinhardt, Karen ; Smith, Patricia B. ; Kelley, Janelle ; Sivasothy, Arunthati

Author_Institution

Gasonics Int., San Jose, CA, USA

fYear

1999

fDate

1999

Firstpage

140

Lastpage

142

Abstract

A novel dry cleaning technology has been developed by GaSonics, which was successfully applied to post etch residue removal. Densified fluid cleaning (DFC) is a dry source, liquid mode cleaning technology. It is based on application of densified gases at elevated pressures and low temperatures. When used together with microwave downstream plasma treatments, DFC enables the damage-free removal of heavy post etch residues containing Al, Ti or Cu, which are not readily affected by other wafer cleaning methods

Keywords

etching; integrated circuit technology; plasma materials processing; surface cleaning; surface contamination; Al; Al residue; Cu; Cu residue; Ti; Ti residue; damage-free residue removal; densified fluid cleaning; densified gases; dry clean technology; dry source liquid mode cleaning technology; gas pressure; gas temperature; heavy post etch residues; microwave downstream plasma treatments; post etch residue removal; wafer cleaning methods; Artificial intelligence; Cleaning; Digital-to-frequency converters; Dry etching; Gases; Inductors; Plasma applications; Plasma sources; Plasma temperature; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787102

Filename

787102