• DocumentCode
    3085267
  • Title

    Influence of sidewall roughness on the reliability of 0.20-μm Al RIE wiring

  • Author

    Ravikumar, R. ; Cichy, H. ; Filippi, R.G. ; Kiewra, E.W. ; Rath, D.L. ; Stojakovic, G.

  • Author_Institution
    DRAM Dev. Alliance, Siemens Microelectron. Inc., Hopewell Junction, NY, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    146
  • Lastpage
    148
  • Abstract
    Aluminum based wiring is widely used in the back-end-of-line (BEOL) metallization of integrated circuits. In a 256 Mb dynamic random access memory (DRAM) product, the first level of Al wiring exists at a 0.20 μm ground rule. Performance and reliability issues from these aggressive ground rules result in serious challenges for semiconductor fabrication processing at the BEOL. This paper compares two different sidewall roughness profiles which were created by varying the post-metal etch wet clean. The resulting “rough” and “smooth” sidewall profiles are correlated with the electrical performance and reliability characteristics of the 256 Mb-DRAM product
  • Keywords
    DRAM chips; aluminium; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; sputter etching; surface cleaning; surface topography; 0.2 micron; 256 Mbit; Al; Al RIE wiring; Al wiring; BEOL metallization; DRAM; DRAM product; aluminum based wiring; back-end-of-line metallization; dynamic random access memory product; electrical performance; ground rule; integrated circuits; post-metal etch wet clean; reliability; reliability characteristics; rough sidewall profile; semiconductor fabrication processing; sidewall roughness; sidewall roughness profiles; smooth sidewall profile; Aluminum; Copper; Current density; Electric resistance; Electromigration; Microelectronics; Random access memory; Testing; Wet etching; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology, 1999. IEEE International Conference
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-5174-6
  • Type

    conf

  • DOI
    10.1109/IITC.1999.787104
  • Filename
    787104