DocumentCode
3085267
Title
Influence of sidewall roughness on the reliability of 0.20-μm Al RIE wiring
Author
Ravikumar, R. ; Cichy, H. ; Filippi, R.G. ; Kiewra, E.W. ; Rath, D.L. ; Stojakovic, G.
Author_Institution
DRAM Dev. Alliance, Siemens Microelectron. Inc., Hopewell Junction, NY, USA
fYear
1999
fDate
1999
Firstpage
146
Lastpage
148
Abstract
Aluminum based wiring is widely used in the back-end-of-line (BEOL) metallization of integrated circuits. In a 256 Mb dynamic random access memory (DRAM) product, the first level of Al wiring exists at a 0.20 μm ground rule. Performance and reliability issues from these aggressive ground rules result in serious challenges for semiconductor fabrication processing at the BEOL. This paper compares two different sidewall roughness profiles which were created by varying the post-metal etch wet clean. The resulting “rough” and “smooth” sidewall profiles are correlated with the electrical performance and reliability characteristics of the 256 Mb-DRAM product
Keywords
DRAM chips; aluminium; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; sputter etching; surface cleaning; surface topography; 0.2 micron; 256 Mbit; Al; Al RIE wiring; Al wiring; BEOL metallization; DRAM; DRAM product; aluminum based wiring; back-end-of-line metallization; dynamic random access memory product; electrical performance; ground rule; integrated circuits; post-metal etch wet clean; reliability; reliability characteristics; rough sidewall profile; semiconductor fabrication processing; sidewall roughness; sidewall roughness profiles; smooth sidewall profile; Aluminum; Copper; Current density; Electric resistance; Electromigration; Microelectronics; Random access memory; Testing; Wet etching; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology, 1999. IEEE International Conference
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-5174-6
Type
conf
DOI
10.1109/IITC.1999.787104
Filename
787104
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