A broadband heterostructure barrier varactor tripler source

Author

Bryllert, Tomas ; Vukusic, Josip ; Olsen, A.O. ; Stake, Jan

Author_Institution

Wasa Millimeter Wave AB, Torslanda, Sweden

fYear

2010

fDate

23-28 May 2010

Firstpage

344

Lastpage

347

Abstract

We present the first demonstration of a broadband Heterostructure Barrier Varactor tripler, designed to cover a major part of the WR-8 waveguide band. The source comprises a waveguide housing, a six-barrier InP-HBV diode flip-chip mounted on an AlN microstrip filter circuit. The conversion loss 3-dB bandwidth was measured to 17% at a center frequency of 112 GHz. The maximum output power was more than 15 mW for an input power of 300 mW. There are no mechanical tuners or DC-bias, which simplifies assembly and allows for ultra-compact design.

Keywords

III-V semiconductors; aluminium compounds; flip-chip devices; indium compounds; microstrip filters; millimetre wave devices; varactors; waveguides; wide band gap semiconductors; AlN; HBV diode flip-chip; InP; WR-8 waveguide band; broadband heterostructure barrier varactor tripler source; frequency 112 GHz; microstrip filter circuit; ultracompact design; waveguide housing; Frequency conversion; Heterostructure Barrier Varactor (HBV); III–V semiconductors; millimeter wave diodes; terahertz sources; varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5514735

Filename

5514735