Title :
Device effect of low energy implantation in high density plasma
Author :
Wu, Hanming ; Lee, Scott ; Yu, Xing ; Liu, Yong ; Chen, John
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
In the present paper, high-density plasma implantation is proposed for shallow junction formation. The inevitable low energy component in ion energy distribution function (IEDF) has been studied by theoretical and numerical methods. Finally, the device effects induced by such a low energy component in IEDF in plasma implantation are analyzed and discussed.
Keywords :
ion implantation; plasma materials processing; semiconductor doping; device effect; high density plasma; ion energy distribution function; low energy component; low energy implantation; plasma implantation; Annealing; Distribution functions; Implants; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Semiconductor device manufacture; Voltage;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306752
