Title :
Copper CMP integration and time dependent pattern effect
Author :
Pan, J. Tony ; Li, Ping ; Wijekoon, Kapila ; Tsai, Stan ; Redeker, Fritz
Author_Institution :
Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
Pattern dependent copper dishing and oxide erosion have been characterized as a function of overpolishing. Copper thickness loss is the sum of field oxide loss, local oxide erosion, and copper dishing, and all of them increase with the degree of overpolishing. Good agreement was obtained between electrically measured copper thickness and that obtained from physical metrology tools. Copper thickness loss as a function of overpolish was quantified for several structures
Keywords :
abrasion; chemical mechanical polishing; copper; dielectric thin films; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; surface topography; thickness measurement; Cu; Cu-SiO2-Si; copper CMP integration; copper dishing; copper thickness loss; electrically measured copper thickness; field oxide loss; local oxide erosion; overpolishing; pattern dependent copper dishing; pattern dependent oxide erosion; physical metrology tools; time dependent pattern effect; Copper; Dielectrics; Electric variables measurement; Fabrication; Integrated circuit interconnections; Metrology; Monitoring; Surface resistance; Surface topography; Testing;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787110
