High electron mobility triangular InGaAs-OI nMOSFETs with (111)B side surfaces formed by MOVPE growth on narrow fin structures

Author

Irisawa, T. ; Oda, Masaomi ; Ikeda, Ken-ichi ; Moriyama, Y. ; Mieda, E. ; Jevasuwan, W. ; Maeda, T. ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Miyamoto, Yutaka ; Tezuka, Taro

Author_Institution

Collaborative Res. Team Green Nanoelectron. Center (GNC), AIST, Tsukuba, Japan

fYear

2013

fDate

9-11 Dec. 2013

Abstract

Triangular In_0.53Ga_0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. Triangular shaped channels with bottom width down to 30 nm were formed by MOVPE growth on narrow InGaAs-OI fins. The formed (111)B surface was demonstrated to provide higher mobility compared with reference InGaAs-OI tri-gate (1.9×) as well as bulk (100) InGaAs nMOSFETs (1.6×), which is possibly due to reduced D_it in conduction band and resultant suppressed carrier trapping at the MOS interface. Lower noise and hysteresis in triangular device supported this model. High I_on value of 930 μA/μm at L_g = 300 nm indicates the potential of the triangular InGaAs-OI nMOSFETs for ultra-low power and high performance CMOS applications.

Keywords

CMOS integrated circuits; MOCVD; MOSFET; electron mobility; gallium arsenide; indium compounds; low-power electronics; oxygen compounds; vapour phase epitaxial growth; In_0.53Ga_0.47As-OI; InGaAs-OI; MOS interface; MOVPE growth; Si; conduction band; high electron mobility triangular nMOSFET; high performance CMOS applications; narrow fin structures; reference trigate; resultant suppressed carrier trapping; size 30 nm; smooth (111)B side surfaces; triangular shaped channels; ultra-low power applications; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; MOSFET; Noise; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724542

Filename

6724542