Material property characterization and integration issues for mesoporous silica

Author

Ryan, E. Todd ; Huei-Min Ho ; Wu, Wen-li ; Ho, Paul S. ; Gidley, David W. ; Drage, Jim

Author_Institution

Sematech, Austin, TX, USA

fYear

1999

fDate

1999

Firstpage

187

Lastpage

189

Abstract

SEMATECH is driving the development of new characterization methodologies that are applicable to mesoporous materials. The results from the characterization of AlliedSignal´s first xerogel material (Nanoglass K2.2-A10B) illustrate the capabilities of these techniques. The characterization results, together with single-level metal Cu/damascene integration studies, demonstrate the issues involved with these potential ultra-low k materials

Keywords

aerogels; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; permittivity; porosity; silicon compounds; Cu-SiO₂; Nanoglass K2.2-A10B; characterization methodologies; integration issues; material property characterization; mesoporous materials; mesoporous silica; single-level metal Cu/damascene integration; ultra-low k materials; xerogel material; Dielectric constant; Dielectric materials; Inorganic materials; Material properties; Materials science and technology; Mesoporous materials; Optical films; Silicon compounds; Storage area networks; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787117

Filename

787117