DocumentCode
3085514
Title
Analysis of the emitter switched thyristor electrical characteristics
Author
Flores, D. ; Godignon, P. ; Vellvehí, M. ; Fernández, J. ; Hidalgo, S. ; Rebollo, J. ; Millán, J.
Author_Institution
Centro Nacional de Microelectronica, CSIC, Barcelona, Spain
fYear
1995
fDate
21-24 Feb 1995
Firstpage
93
Abstract
This paper addresses the analysis of the emitter switched thyristor (EST). The operation mode and the transient process are studied by means of 2D numerical simulations. Structures with different cell dimensions have been fabricated. The dependence of the maximum controllable current on the geometrical dimensions is also analyzed from experimental results. The comparision of the output characteristics of equivalent EST, IGBT and BRT devices are also reported
Keywords
numerical analysis; semiconductor device models; semiconductor device testing; thyristors; 2D numerical simulation; electrical characteristics; emitter switched thyristor; experiment; geometrical dimensions; operation mode; output characteristics; transient process; Cathodes; Circuit simulation; Electric variables; Fabrication; Insulated gate bipolar transistors; MOSFETs; Medical simulation; Thyristors; Transient analysis; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Drive Systems, 1995., Proceedings of 1995 International Conference on
Print_ISBN
0-7803-2423-4
Type
conf
DOI
10.1109/PEDS.1995.404941
Filename
404941
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