Title :
A high performance and reliable low-k inter-metal dielectric using hydrogen silsesquioxane (HSQ)
Author :
Cheng, Y.Y. ; Jang, S.M. ; Yu, C.H. ; Sun, S.C. ; Liang, M.S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
We have comprehensively characterized inorganic HSQ as a low-k intermetal dielectric (IMD). Line-to-line capacitance reduction of over 20% for 0.23/0.23 μm metal pitch has been achieved and excellent thermal stability of high performance interconnects is demonstrated. With proper treatment, the contact resistance (Rc) of shrunk unlanded vias is proven to be good and a five-level metal logic vehicle with HSQ IMD shows comparable yield to undoped oxide (USG) IMD. With optimized process flow, HSQ exhibits better hot carrier reliability than USG. Furthermore, adhesion tests indicate that HSQ has excellent mechanical strength. By various product reliability tests, the low-k HSQ IMD is demonstrated to be highly reliable
Keywords :
adhesion; capacitance; contact resistance; hot carriers; hydrogen compounds; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; integrated logic circuits; mechanical strength; thermal stability; 0.23 micron; HSQ; HSQ IMD; IMD; USG IMD; adhesion tests; contact resistance; five-level metal logic vehicle; hot carrier reliability; hydrogen silsesquioxane; inorganic HSQ; interconnect performance; line-to-line capacitance; low-k HSQ IMD; low-k intermetal dielectric; mechanical strength; metal pitch; optimized process flow; product reliability tests; reliable low-k inter-metal dielectric; shrunk unlanded vias; thermal stability; undoped oxide IMD; Capacitance; Dielectric constant; Furnaces; Hot carriers; Hydrogen; Logic; Temperature; Testing; Thermal stability; Vehicles;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787119
