A high performance and reliable low-k inter-metal dielectric using hydrogen silsesquioxane (HSQ)

Author

Cheng, Y.Y. ; Jang, S.M. ; Yu, C.H. ; Sun, S.C. ; Liang, M.S.

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

1999

fDate

1999

Firstpage

193

Lastpage

195

Abstract

We have comprehensively characterized inorganic HSQ as a low-k intermetal dielectric (IMD). Line-to-line capacitance reduction of over 20% for 0.23/0.23 μm metal pitch has been achieved and excellent thermal stability of high performance interconnects is demonstrated. With proper treatment, the contact resistance (R_c) of shrunk unlanded vias is proven to be good and a five-level metal logic vehicle with HSQ IMD shows comparable yield to undoped oxide (USG) IMD. With optimized process flow, HSQ exhibits better hot carrier reliability than USG. Furthermore, adhesion tests indicate that HSQ has excellent mechanical strength. By various product reliability tests, the low-k HSQ IMD is demonstrated to be highly reliable

Keywords

adhesion; capacitance; contact resistance; hot carriers; hydrogen compounds; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; integrated logic circuits; mechanical strength; thermal stability; 0.23 micron; HSQ; HSQ IMD; IMD; USG IMD; adhesion tests; contact resistance; five-level metal logic vehicle; hot carrier reliability; hydrogen silsesquioxane; inorganic HSQ; interconnect performance; line-to-line capacitance; low-k HSQ IMD; low-k intermetal dielectric; mechanical strength; metal pitch; optimized process flow; product reliability tests; reliable low-k inter-metal dielectric; shrunk unlanded vias; thermal stability; undoped oxide IMD; Capacitance; Dielectric constant; Furnaces; Hot carriers; Hydrogen; Logic; Temperature; Testing; Thermal stability; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787119

Filename

787119