Title :
Ultra-shallow arsenic profiling using enhanced depth-resolution analysis technique with medium energy ion scattering
Author :
Takai, M. ; Ichihara, S. ; Abo, S. ; Wakaya, E. ; Sayama, H. ; Eimori, T. ; Inoue, Y.
Author_Institution :
Res. Center for Mater. Sci. at Extreme Conditions, Osaka, Japan
Abstract :
Medium Energy Ion Scattering (MEIS) using a toroidal electrostatic analyzer (TEA) with an energy resolution (ΔE/E) of 4 x 10-3 has been used for ultra-shallow depth profiling of As implanted in Si at 1-5 keV to a dose of 1.2 × 1015 ions/cm2 before and after RTA and spike annealing. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.
Keywords :
arsenic; doping profiles; elemental semiconductors; ion implantation; ion-surface impact; rapid thermal annealing; secondary ion mass spectra; semiconductor doping; silicon; 1 to 5 keV; MEIS; RTA; SIMS; Si:As; enhanced depth-resolution analysis technique; medium energy ion scattering; spike annealing; toroidal electrostatic analyzer; ultra-shallow As profiling; Annealing; Atomic layer deposition; Calibration; Electrostatic analysis; Energy resolution; Integrated circuit measurements; Ion beams; Light scattering; Materials science and technology; Particle scattering;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306763
