Ultra-shallow arsenic profiling using enhanced depth-resolution analysis technique with medium energy ion scattering

Author

Takai, M. ; Ichihara, S. ; Abo, S. ; Wakaya, E. ; Sayama, H. ; Eimori, T. ; Inoue, Y.

Author_Institution

Res. Center for Mater. Sci. at Extreme Conditions, Osaka, Japan

fYear

2004

fDate

15-16 March 2004

Firstpage

76

Lastpage

80

Abstract

Medium Energy Ion Scattering (MEIS) using a toroidal electrostatic analyzer (TEA) with an energy resolution (ΔE/E) of 4 x 10^-3 has been used for ultra-shallow depth profiling of As implanted in Si at 1-5 keV to a dose of 1.2 × 10¹⁵ ions/cm² before and after RTA and spike annealing. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.

Keywords

arsenic; doping profiles; elemental semiconductors; ion implantation; ion-surface impact; rapid thermal annealing; secondary ion mass spectra; semiconductor doping; silicon; 1 to 5 keV; MEIS; RTA; SIMS; Si:As; enhanced depth-resolution analysis technique; medium energy ion scattering; spike annealing; toroidal electrostatic analyzer; ultra-shallow As profiling; Annealing; Atomic layer deposition; Calibration; Electrostatic analysis; Energy resolution; Integrated circuit measurements; Ion beams; Light scattering; Materials science and technology; Particle scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306763

Filename

1306763