Title :
Ultra low dielectric constant silsesquioxane based resin [ILDs]
Author :
Moyer, Eric S. ; Chung, K. ; Spaulding, M. ; Deis, T. ; Boisvert, R. ; Saha, C. ; Bremmer, J.
Author_Institution :
Dow Corning Corp., Midland, MI, USA
Abstract :
Low dielectric constant films have been developed by a new silsesquioxane based chemistry with k values approaching 1.5. A process has been developed which allows the control of the electrical and mechanical properties of the films. In addition, thick, crack-free films can be prepared which are suitable for copper damascene processes
Keywords :
copper; dielectric thin films; hydrogen compounds; integrated circuit interconnections; integrated circuit metallisation; permittivity; Cu; copper damascene processes; crack-free films; film electrical properties; film mechanical properties; hydrogen silsesquioxane based chemistry; k values; low dielectric constant films; silsesquioxane based chemistry; ultra low dielectric constant silsesquioxane based resin ILDs; Chemistry; Coatings; Dielectric constant; Dielectric materials; Mechanical factors; Optical films; Resins; Semiconductor films; Solvents; Temperature;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787120
