DocumentCode
3085564
Title
A MMIC 4X2 switch matrix for 0.5–3GHZ application
Author
Yuzhe Liu ; Hongwen Yang ; Yuepeng Yan ; Yang Wang
Author_Institution
Dept. of Electron. Syst., Inst. of Microelectron., Beijing, China
fYear
2013
fDate
1-3 Aug. 2013
Firstpage
69
Lastpage
70
Abstract
A Monolithic microwave integrated circuit (MMIC) 4X2 switch matrix using 0.5um GaAs PHEMT process has been designed for 0.5-3GHZ application. This switch matrix is composed of four special SPDT switches and a 4-bit logical decoder integrated on a single chip. Inductive Bonding wire and package parasite effect are also taken into consideration. This switch matrix is designed to be controlled by positive voltage. The designed switch matrix shows good performance under all working conditions: the insertion loss is less than 5dB, the isolation is no worse than 30dB, the return loss is better than -12dB, the P1dB is better than 26dBm. The chip size of designed switch matrix is only 1.45mm*1.45mm.
Keywords
HEMT integrated circuits; III-V semiconductors; field effect MMIC; gallium arsenide; lead bonding; microwave switches; GaAs; MMIC 4X2 switch matrix; PHEMT process; SPDT switches; frequency 0.5 GHz to 3 GHz; inductive bonding wire; logical decoder; monolithic microwave integrated circuit; package parasite effect; size 0.5 mum; size 1.45 mm; word length 4 bit; Abstracts; Equalizers; HEMTs; MMICs; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetics (iWEM), 2013 IEEE International Workshop on
Conference_Location
Kowloon
Print_ISBN
978-1-4799-6654-7
Type
conf
DOI
10.1109/iWEM.2013.6888772
Filename
6888772
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