• DocumentCode
    3085564
  • Title

    A MMIC 4X2 switch matrix for 0.5–3GHZ application

  • Author

    Yuzhe Liu ; Hongwen Yang ; Yuepeng Yan ; Yang Wang

  • Author_Institution
    Dept. of Electron. Syst., Inst. of Microelectron., Beijing, China
  • fYear
    2013
  • fDate
    1-3 Aug. 2013
  • Firstpage
    69
  • Lastpage
    70
  • Abstract
    A Monolithic microwave integrated circuit (MMIC) 4X2 switch matrix using 0.5um GaAs PHEMT process has been designed for 0.5-3GHZ application. This switch matrix is composed of four special SPDT switches and a 4-bit logical decoder integrated on a single chip. Inductive Bonding wire and package parasite effect are also taken into consideration. This switch matrix is designed to be controlled by positive voltage. The designed switch matrix shows good performance under all working conditions: the insertion loss is less than 5dB, the isolation is no worse than 30dB, the return loss is better than -12dB, the P1dB is better than 26dBm. The chip size of designed switch matrix is only 1.45mm*1.45mm.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; field effect MMIC; gallium arsenide; lead bonding; microwave switches; GaAs; MMIC 4X2 switch matrix; PHEMT process; SPDT switches; frequency 0.5 GHz to 3 GHz; inductive bonding wire; logical decoder; monolithic microwave integrated circuit; package parasite effect; size 0.5 mum; size 1.45 mm; word length 4 bit; Abstracts; Equalizers; HEMTs; MMICs; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetics (iWEM), 2013 IEEE International Workshop on
  • Conference_Location
    Kowloon
  • Print_ISBN
    978-1-4799-6654-7
  • Type

    conf

  • DOI
    10.1109/iWEM.2013.6888772
  • Filename
    6888772