Title :
Future prospects of MRAM technologies
Author :
Yuasa, Shinji ; Fukushima, Akio ; Yakushiji, Kay ; Nozaki, Takayuki ; Konoto, Masaaki ; Maehara, Hiroaki ; Kubota, Hajime ; Taniguchi, Takafumi ; Arai, Hiroyuki ; Imamura, Hiroshi ; Ando, K. ; Shiota, Y. ; Bonell, F. ; Suzuki, Yuya ; Shimomura, Naoharu ;
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
This paper presents a review and future prospects for the tunnel magnetoresistance (TMR) effect in magnetic tunnel junction (MTJ) and spin manipulation technologies such as spin-transfer torque (STT) for magnetoresistive random access memory (MRAM). Major challenges for ultrahigh-density STT-MRAM with perpendicular magnetization and novel functional devices related to MRAM are discussed.
Keywords :
MRAM devices; tunnelling magnetoresistance; MRAM; magnetic tunnel junction; magnetoresistive random access memory; spin manipulation technologies; spin-transfer torque; tunnel magnetoresistance effect; Magnetic switching; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Switches; Thermal stability; Writing;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724549
