Title :
Extraction noise transport time (τ) and its impact over the four noise parameters of advanced SiGe HBT
Author :
Luis-Pineda, L.F. ; Ramirez-Garcia, E. ; Zerounian, N. ; Aniel, F. ; Aguilar, M.A.E.
Author_Institution :
Inst. Politec. Nac., UPALM, Mexico City, Mexico
Abstract :
This paper introduces some results concerning the high frequency noise analysis, along with the noise transport time (r) extraction and its impact over the microwave noise performances of SiGe heterojunction bipolar transistors (HBT). Our methodology of noise analysis can be extended to investigate the impact of the technological variations of the base over the microwave noise performances of high speed SiGe HBTs.
Keywords :
Ge-Si alloys; circuit noise; heterojunction bipolar transistors; semiconductor device noise; HBT; SiGe; extraction noise transport time; heterojunction bipolar transistor; high frequency noise analysis; microwave noise performances; noise parameter; technological variation; Heterojunction bipolar transistors; Junctions; Microwave transistors; Noise; Noise measurement; Silicon germanium; Microwave noise; SiGe HBT; noise transport time;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control (CCE), 2012 9th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4673-2170-9
DOI :
10.1109/ICEEE.2012.6421151
