Title :
A broadband pHEMT image-reject mixer
Author :
Zhengyu Sun ; Yuepeng Yan
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
This paper presents a broadband image-reject mixer consisting of a wideband image reject mixer with active baluns. A switched transconductor mixer embedded with an active balun for the local oscillator (LO) signal is designed. An active balun for RF input signal with a RC parallel network to reduce gain and phase imbalance is proposed. Implemented in a 0.5μm InGaAs E-mode pHEMT, the mixer can achieve conversion gain of 9 dB, image rejection of 32 dBc, single sideband noise figure of 13 dB, and third-order input intercept point (IIP3) of 9 dBm over the entire frequency range of 0.5 to 5.5 GHz.
Keywords :
III-V semiconductors; baluns; gallium arsenide; high electron mobility transistors; indium compounds; microwave mixers; oscillators; E-mode pHEMT; IIP3; InGaAs; LO signal; RC parallel network; RF input signal; active baluns; broadband image-reject mixer; broadband pHEMT image-reject mixer; conversion gain; frequency 0.5 GHz to 5.5 GHz; gain 13 dB; gain 9 dB; image rejection; local oscillator signal; phase imbalance; single sideband noise figure; size 0.5 mum; switched transconductor mixer; third-order input intercept point; wideband image reject mixer; Abstracts; Broadband communication; Mixers; Radio frequency; Switches; TV; Time-frequency analysis;
Conference_Titel :
Electromagnetics (iWEM), 2013 IEEE International Workshop on
Conference_Location :
Kowloon
Print_ISBN :
978-1-4799-6654-7
DOI :
10.1109/iWEM.2013.6888777
