Title :
Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm
Author :
Sato, Hikaru ; Yamamoto, Takayuki ; Yamanouchi, Masato ; Ikeda, Shoji ; Fukami, Shunsuke ; Kinoshita, Keizo ; Matsukura, Fumihiro ; Kasai, Naoki ; Ohno, Hideo
Author_Institution :
Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan
Abstract :
We study characteristics of CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis (p-MTJ) at a reduced dimension down to 1X nm fabricated by hard-mask process. CoFeB-MgO p-MTJ with double-interface shows higher thermal stability down to 1X nm than that with single-interface. Thermal stability factor of 58 and intrinsic critical current of 24 μA are obtained in the CoFeB-MgO magnetic tunnel junction with perpendicular easy-axis using double-interface structure at a diameter of 20 nmφ.
Keywords :
cobalt compounds; iron compounds; magnesium compounds; magnetic tunnelling; magnetoelectronics; thermal stability; CoFeB-MgO; current 24 muA; double-interface scaling; double-interface structure; hard-mask process; intrinsic critical current; magnetic tunnel junction characteristics; p-MTJ; perpendicular easy-axis; single-interface scaling; spintronics; thermal stability factor; Junctions; Magnetic fields; Magnetic tunneling; Resistance; Scanning electron microscopy; Switches; Thermal stability;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724550
