Title :
Embedded organic low-κ structures for sub-0.18 μm CMOS VLSI MLM: integration and etching issues
Author :
Maynard, Helen L. ; Pai, Chien S. ; Case, Carlye B. ; Adebanjo, Richardson O. ; Baker, Michael R. ; Tai, W. Wai ; Liu, Ruichen
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
In this paper, we have demonstrated the feasibility of embedding a low-κ film in an oxide interconnect structure. Using the low-κ film in this manner optimizes the usefulness of the low-κ material to reduce between-line capacitance and cross-talk while maintaining the superior global planarizability of oxide CMP processing. The etching of the embedded low-κ structure is substantially more complicated than for conventional oxide vias, but the challenges are not insurmountable with proper dilution of the etchant and passivation of the sidewalls. The via-chain resistance of a 2-level Al/W metal structure created with the embedded low-κ film is comparable to that obtained with an all-oxide structure, demonstrating that the approach is compatible with conventional Al/W interconnect processing
Keywords :
CMOS integrated circuits; VLSI; aluminium; capacitance; chemical mechanical polishing; dielectric thin films; etching; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; organic compounds; passivation; permittivity; tungsten; 0.18 micron; Al-W; Al/W interconnect processing; Al/W metal structure; CMOS VLSI MLM; SiO2; all-oxide structure; between-line capacitance; cross-talk; embedded organic low-k structures; etchant dilution; etching; global planarizability; integration; low-k film; low-k material; oxide CMP processing; oxide interconnect structure; oxide vias; sidewall passivation; via-chain resistance; CMOS technology; Dielectric materials; Etching; Inorganic materials; Mechanical factors; Organic materials; Parasitic capacitance; Polymers; Resists; Very large scale integration;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787125
