Title :
20-nm magnetic domain wall motion memory with ultralow-power operation
Author :
Fukami, Shunsuke ; Yamanouchi, Masato ; Kim, K.-J. ; Suzuki, Takumi ; Sakimura, Noboru ; Chiba, D. ; Ikeda, Shoji ; Sugibayashi, Tadahiko ; Kasai, Naoki ; Ono, Takahito ; Ohno, Hideo
Author_Institution :
Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan
Abstract :
We study the write and retention properties of magnetic domain wall (DW)-motion memory devices with the dimensions down to 20 nm. We find that the write current and time are scaled along with device size while sufficient thermal stability and low error rate are maintained. As a result, ultralow-power (a few fJ) and reliable operation is possible even at reduced dimensions.
Keywords :
MRAM devices; magnetic domain walls; magnetic domain wall motion memory; size 20 nm; thermal stability; ultralow power operation; write current; Error analysis; Integrated circuits; Magnetic fields; Mathematical model; Resistance; Thermal stability; Writing;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724553
