DocumentCode
3085675
Title
Estimation of ultra-shallow plasma doping (PD) layer´s optical absorption properties by spectroscopic ellipsometry (SE)
Author
Jin, C.G. ; Sasaki, Y. ; Tsutsui, K. ; Tamura, H. ; Mizuno, B. ; Higaki, R. ; Satoh, T. ; Majima, K. ; Sauddin, H. ; Takagi, K. ; Ohmi, S. ; Iwai, H.
Author_Institution
Ultimate Junction Technol. Inc., Osaka, Japan
fYear
2004
fDate
15-16 March 2004
Firstpage
102
Lastpage
106
Abstract
We evaluated the optical absorption properties of ultra-shallow (<10 nm) plasma doping (PD) layers by spectroscopic ellipsometry (SE). The optical absorption coefficients of PD layers are much larger than that of crystalline Si (c-Si) substrate by one figure at maximum in the wavelength range from 400 nm to 800 nm. We also found that higher DC bias during PD resulted in higher optical absorption coefficient for the same PD time of 60 seconds.
Keywords
ellipsometry; impurity absorption spectra; semiconductor doping; 10 nm; 400 to 800 nm; 60 sec; Si; higher DC bias; optical absorption coefficients; optical absorption properties; spectroscopic ellipsometry; ultra-shallow plasma doping; Absorption; Doping; Electron optics; Ellipsometry; Optical pumping; Optical refraction; Optical surface waves; Plasma properties; Plasma waves; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN
0-7803-8191-2
Type
conf
DOI
10.1109/IWJT.2004.1306769
Filename
1306769
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