Title :
Estimation of ultra-shallow plasma doping (PD) layer´s optical absorption properties by spectroscopic ellipsometry (SE)
Author :
Jin, C.G. ; Sasaki, Y. ; Tsutsui, K. ; Tamura, H. ; Mizuno, B. ; Higaki, R. ; Satoh, T. ; Majima, K. ; Sauddin, H. ; Takagi, K. ; Ohmi, S. ; Iwai, H.
Author_Institution :
Ultimate Junction Technol. Inc., Osaka, Japan
Abstract :
We evaluated the optical absorption properties of ultra-shallow (<10 nm) plasma doping (PD) layers by spectroscopic ellipsometry (SE). The optical absorption coefficients of PD layers are much larger than that of crystalline Si (c-Si) substrate by one figure at maximum in the wavelength range from 400 nm to 800 nm. We also found that higher DC bias during PD resulted in higher optical absorption coefficient for the same PD time of 60 seconds.
Keywords :
ellipsometry; impurity absorption spectra; semiconductor doping; 10 nm; 400 to 800 nm; 60 sec; Si; higher DC bias; optical absorption coefficients; optical absorption properties; spectroscopic ellipsometry; ultra-shallow plasma doping; Absorption; Doping; Electron optics; Ellipsometry; Optical pumping; Optical refraction; Optical surface waves; Plasma properties; Plasma waves; Spectroscopy;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306769
