High frequency simulation and characterization of advanced copper interconnects

Author

Cregut, Corinne ; Le Carval, Gilles ; Chilo, Jean

Author_Institution

Snaketech, Voiron, France

fYear

1999

fDate

1999

Firstpage

221

Lastpage

223

Abstract

In this paper, we evaluate the impact of copper on high frequency (HF) behavior for deep submicron interconnects. In particular, we compare aluminum vs. copper structures and study the association of copper with low-k dielectrics. Firstly, we use electromagnetic (EM) and electrical simulations to determine the necessary level of modeling. As a second step, we perform time domain characterization of dedicated devices. In this study, we measure the effective benefits in terms of crosstalk when combining copper and low-k

Keywords

MMIC; circuit simulation; copper; crosstalk; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit testing; permittivity; time-domain analysis; Al; Cu; EM simulations; aluminum structures; copper interconnects; copper structures; copper/low-k interconnects; crosstalk; electrical simulations; electromagnetic simulations; high frequency characterization; high frequency simulation; interconnects; low-k dielectrics; modeling; time domain characterization; Aluminum; Circuit simulation; Copper; Crosstalk; Delay effects; Frequency; Hafnium; Integrated circuit interconnections; Microstrip; RLC circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787127

Filename

787127