Characterization and fabrication of SiOx nano-metric films, obtained by reactive sputtering

Author

Alarcon-Salazar, J. ; Aceves-Mijares, M. ; Roman-Lopez, S. ; Falcony, Ciro

Author_Institution

Dept. of Electron., INAOE, Tonanzintla Puebla, Mexico

fYear

2012

fDate

26-28 Sept. 2012

Firstpage

1

Lastpage

5

Abstract

Nano-metric layers were obtained by reactive sputtering using different oxygen/argon (O/Ar) flow rates. Si and SiO targets were used to make SiO_x films (x≤2) and these were annealed at three different temperatures, 600 °C, 900 °C and 1100 °C during 30 minutes, in N₂ ambient. The samples were characterized by Null Ellipsometry, Fourier Transform Infra Red (FTIR) spectroscopy, Photoluminescence (PL) and Atomic Force Microscopy (AFM). Results show that the as deposited films are off stoichiometric silicon, which move towards stoichiometric SiO₂ with annealing. Poor photoluminescence was found. Average roughness (S_a) was determined between 2 a 4 nm after thermal treatments (TT).

Keywords

Fourier transform spectra; annealing; atomic force microscopy; infrared spectra; nanofabrication; nanostructured materials; photoluminescence; silicon compounds; sputter deposition; stoichiometry; surface roughness; thin films; AFM; FTIR spectroscopy; Fourier transform infrared spectroscopy; SiO₂; SiO_x nanometric film fabrication; annealing; atomic force microscopy; film deposition; film roughness; nanometric layer characterization; null ellipsometry; off stoichiometric silicon; oxygen-argon flow rates; photoluminescence; reactive sputtering; temperature 1100 degC; temperature 600 degC; temperature 900 degC; thermal treatments; time 30 min; Annealing; Argon; Films; Photoluminescence; Refractive index; Silicon; Sputtering; AFM; FTIR; PL; Si; SiO; TT;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering, Computing Science and Automatic Control (CCE), 2012 9th International Conference on

Conference_Location

Mexico City

Print_ISBN

978-1-4673-2170-9

Type

conf

DOI

10.1109/ICEEE.2012.6421157

Filename

6421157