Title :
A 3.5 mW 2.5 GHz diversity receiver and a 1.2 mW 3.6 GHz VCO in silicon-on-anything
Author :
Wagemans, A. ; Ballus, P. ; Dekker, R. ; Hoogstraate, A. ; Maas, H. ; Tombeur, A. ; van Sinderen, J.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
A fully-integrated voltage controlled oscillator (VCO) and RF diversity receiver are fabricated in a bipolar IC technology called silicon-on-anything. With this silicon based technology it is possible to fabricate low-power transistors, as well as integrated inductors that have a quality factor of 225 at 1 GHz. The inductors in the VCO exhibit a maximum quality factor of 29 at 4 GHz, with a self-resonance frequency of 10.5 GHz.
Keywords :
diversity reception; 1.2 mW; 2.5 GHz; 3.5 mW; 3.6 GHz; Si; VCO; bipolar IC technology; diversity receiver; integrated inductors; low-power transistors; quality factor; self-resonance frequency; silicon-on-anything technology; Dielectric substrates; Energy consumption; Etching; Glass; Inductors; Q factor; Radio frequency; Radiofrequency integrated circuits; Silicon; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4344-1
DOI :
10.1109/ISSCC.1998.672456
