Title :
A high Q on-chip Cu inductor post process for Si integrated circuits
Author :
Rogers, John ; Tan, Liang ; Smy, Tom ; Tait, Niall ; Tarr, Garry
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
A technique has been developed to add high Q inductors to conventional silicon integrated circuits as a post processing step. The inductors are formed by copper plating over a low k dielectric layer of polyimide. An electroless copper deposition technique is used with a plating guide providing a simple method of producing high quality patterned metal. Inductors with a peak Q as high as 17 at a frequency of 2 GHz have been fabricated
Keywords :
Q-factor; UHF integrated circuits; copper; dielectric thin films; electroless deposition; inductors; integrated circuit metallisation; permittivity; polymer films; 2 GHz; Cu; Si; Si integrated circuits; copper plating; electroless copper deposition technique; high Q inductors; high Q on-chip Cu inductor post process; inductor peak Q; inductors; low k dielectric layer; patterned metal; plating guide; polyimide low-k dielectric; post processing step; silicon integrated circuits; Aluminum; Artificial intelligence; Conductivity; Copper; Dielectric substrates; Etching; Inductors; Integrated circuit interconnections; Polyimides; Voltage-controlled oscillators;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787132
