Title :
Novel NiSi technology utilizing Ti/Ni/TiN structure and fluorine implantation for thermal stability improvement by suppression of abnormal oxidation
Author :
Yun, Jang-Gn ; Oh, Soon-Young ; Ji, Hee-Hwan ; Huang, Bin-Feng ; Park, Young-Ho ; Wang, Jin-Suk ; Lee, Hi-Deok
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea
Abstract :
A novel NiSi technology is proposed to improve the thermal stability and to suppress the abnormal oxidation of NiSi, which occurs especially on the As-doped substrate. The dependence of Nickel-Silicide property on the source/drain dopants has also been characterized. Although there is minimal dependence of NiSi on the dopants right after the silicide formation, NiSi is strongly dependent on the source/drain dopants when high temperature post silicidation furnace annealing is applied. BF2-doped source/drain shows much superior thermally robust characteristics than As-doped source/drain mainly due to the abnormal oxidation of As-doped substrate after the furnace annealing. A novel Ti/Ni/TiN structure with fluorine ion implantation (F I/I in short) showed the great improvement of the thermal stability as well as the suppression of the abnormal oxidation especially on the As-doped source/drain.
Keywords :
ULSI; contact resistance; fluorine; ion implantation; nickel; oxidation; semiconductor doping; thermal stability; titanium; titanium compounds; NiSi; NiSi technology; Si:BF2; Si:F; Ti-Ni-TiN; Ti/Ni/TiN structure; abnormal oxidation suppression; fluorine implantation; fluorine ion implantation; source/drain dopants; thermal stability improvement; Annealing; Furnaces; Ion implantation; Oxidation; Robustness; Silicidation; Silicides; Temperature dependence; Thermal stability; Tin;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306776