• DocumentCode
    3085836
  • Title

    Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification

  • Author

    Lee, Moon Ho ; Lin, Jia-Chin ; Wei, Y.-T. ; Chen, Chia-Wei ; Tu, Wen-Hua ; Zhuang, H.-K. ; Tang, M.

  • Author_Institution
    Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    The ferroelectric negative capacitance (NC) hetero-tunnel FET is fabricated for the first time, demonstrating the significant improvement in subthreshold swing (~double slope) and peak gm (118% enhancement) due to the internal voltage amplification. The peak gm enhancement at small VDS (-0.1V) indicates the intrinsic benefit by NC without lateral bias. The concept of coupling the ferroelectric polarization is proposed and synergistically contributes to the performance in future applications of steep subthreshold slope devices.
  • Keywords
    capacitance; ferroelectricity; field effect transistors; tunnel transistors; ferroelectric negative capacitance; ferroelectric polarization; hetero-tunnel field effect transistors; internal voltage amplification; steep subthreshold slope devices; Capacitance; Field effect transistors; Hafnium compounds; Iron; Logic gates; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724561
  • Filename
    6724561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3085836