Quantum transport simulations on the feasibility of the bilayer pseudospin field effect transistor (BiSFET)

Author

Xuehao Mou ; Register, Leonard F. ; Banerjee, Sanjay K.

Author_Institution

Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA

fYear

2013

fDate

9-11 Dec. 2013

Abstract

The feasibility of ultra low-voltage switching in the proposed Bilayer PseudoSpin Field-Effect Transistor (BiSFET) “beyond CMOS” device concept is illustrated using quantum transport simulations. The BiSFET relies on possible room-temperature superfluid condensation in dielectrically separated graphene layers. Simulations illustrate resulting greatly enhanced interlayer tunneling, and critical voltages for switching between ON and OFF interlayer conductance states below the thermal voltage of ~26 mV at 300 K. The BiSFET switching mechanism is also contrasted to the “drag-counterflow” biasing configuration with much higher switching voltages.

Keywords

condensation; critical currents; electron-hole recombination; excitons; field effect transistors; graphene; tunnelling; BiSFET; bilayer pseudospin field effect transistor; critical voltages; dielectrically separated graphene layers; interlayer conductance states; interlayer tunneling; quantum transport simulations; room temperature superfluid condensation; temperature 300 K; ultra low voltage switching; Couplings; Elementary particle exchange interactions; Excitons; Graphene; Registers; Switches; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724563

Filename

6724563