DocumentCode
3085890
Title
Growth mechanism of epitaxial NiSi2 layer in the Ni/Ti/Si(001) contact for atomically flat interfaces
Author
Nakatsuka, Osamu ; Okubo, Kazuya ; Sakai, Akira ; Zaima, Shigeaki ; Yasuda, Yukio
Author_Institution
Center for Integrated Res. in Sci. & Eng., Nagoya Univ., Japan
fYear
2004
fDate
15-16 March 2004
Firstpage
143
Lastpage
146
Abstract
The crystalline structure and electrical properties of an epitaxial Ni silicide film formed in a Ni/Ti/Si system were investigated. The {111} facets at the Ni silicide/Si interface disappears with increasing the annealing temperature. As the result, the film morphology is improved and the sheet resistance of the film is reduced. Pseudomorphic metastable-NiSi2 is formed after annealing at 350°C, and that transforms to pseudomorphic NiSi2 with the CaF2-type structure at 650°C. The epitaxial NiSi2 film after annealing at 850°C has the in-plane tensile strain on the Si substrate.
Keywords
annealing; metallic epitaxial layers; nickel; nickel compounds; ohmic contacts; tensile strength; titanium; 350 degC; 650 degC; 850 degC; Ni-Ti-Si; Ni/Ti/Si(001) contact; NiSi2; annealing temperature; atomically flat interfaces; crystalline structure; electrical properties; epitaxial NiSi2 layer; film morphology; growth mechanism; in-plane tensile strain; sheet resistance; Annealing; Crystallization; Electric resistance; Metastasis; Morphology; Semiconductor films; Silicides; Substrates; Temperature; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN
0-7803-8191-2
Type
conf
DOI
10.1109/IWJT.2004.1306779
Filename
1306779
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