Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs

Author

Lizzit, Daniel ; Esseni, David ; Palestri, Pierpaolo ; Selmi, Luca

Author_Institution

DIEGM, Univ. of Udine, Udine, Italy

fYear

2013

fDate

9-11 Dec. 2013

Abstract

This paper presents a new model for the surface roughness (SR) limited mobility (μ_SR). The model is suitable for bulk, for ultra thin body (UTB) and for Hetero-Structure Quantum Well (HS-QW) MOSFETs. Comparison with experimental mobility for Si bulk MOSFETs shows that a good agreement with measured mobility can be obtained with a r.m.s. value of the SR spectrum close to several AFM and TEM measurements. For III-V MOSFETs with small well thickness the proposed model shows a weaker mobility degradation with respect to the T_w⁶ behavior.

Keywords

III-V semiconductors; MOSFET; atomic force microscopy; elemental semiconductors; quantum well devices; semiconductor device models; silicon; silicon-on-insulator; surface roughness; transmission electron microscopy; AFM; HS-QW MOSFET; Si; TEM; UTB MOSFET; atomic force microscopy; heterostructure quantum well MOSFET; quantum well III-V MOSFET; surface roughness limited mobility modeling; transmission electron microscopy; ultra thin body MOSFET; ultra-thin SOI; Gallium; Hafnium compounds; MOSFET; Numerical models; Scattering; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724565

Filename

6724565