Title :
Solid-state amplifiers for terahertz electronics
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
Abstract :
With the fMAX of current generation InP transistors pushing above 1-THz and new transistor scaling in progress, the operational frequency of solid-state amplifiers is being pushed towards THz frequencies. In this paper we present out latest work towards demonstrating THz frequency amplifiers, including measured gain and noise performance of a 0.48 THz low noise amplifier using scaled InP transistors. Initial performance of next generation transistors is also presented, along with infrastructure necessary to package and operate solid-state amplifiers at THz frequencies.
Keywords :
indium compounds; low noise amplifiers; submillimetre wave amplifiers; InP; LNA; frequency 0.48 THz; low noise amplifier; next generation transistors; solid-state amplifiers; terahertz electronics; transistor scaling; Frequency measurement; Gain measurement; Indium phosphide; Low-noise amplifiers; Noise measurement; Operational amplifiers; Packaging; Performance gain; Solid state circuits; Transistors; HBT; HEMT; Indium Phosphide; Integrated Circuit; Low Noise Amplifier; MMIC; Terahertz;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5514771