Title :
Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit
Author :
Mishra, Vivekanand ; Smith, Samuel ; Ganapathi, K. ; Salahuddin, Sania
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California Berkeley, Berkeley, CA, USA
Abstract :
The optimal performance of ultimately scaled transition metal dichalcogenide (TMD) FETs for four different materials and one to five layers is investigated using ballistic quantum transport calculations with material properties derived from first-principles. Large bandgaps and effective masses are shown to result in excellent switching performance at 5 nm gate lengths, thus showing potential for low-power applications. However, achievable current falls short of ITRS low operating power specifications.
Keywords :
ballistic transport; chalcogenide glasses; field effect transistors; transition metals; ballistic quantum transport calculations; channel length limit; effective masses; large bandgaps; low power applications; material properties; size 5 nm; switching performance; transition metal dichalcogenide transistors; ultimately scaled transition metal dichalcogenide FET; Effective mass; Electrostatics; Field effect transistors; Logic gates; Materials; Photonic band gap;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724569