DocumentCode
3086040
Title
InP heterojunction bipolar transistor decision circuits
Author
Samoska, L. ; Pullela, R. ; Agarwal, B. ; Mensa, D. ; Lee, Q. ; Kaman, V. ; Guthrie, J. ; Rodwell, M.J.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
3
fYear
1998
fDate
7-12 June 1998
Firstpage
1843
Abstract
We have designed and built 30 Gb/s master-slave D-flip-flop circuits using InGaAs-InAlAs HBT´s. The HBT devices have a /spl beta/ of 30, and f/sub max/ and f, of 160 and 106 GHz, respectively. We discuss methods of testing decision circuits when bit error rate testing is not available at high data rates.
Keywords
III-V semiconductors; aluminium compounds; bipolar logic circuits; decision circuits; flip-flops; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit testing; optical communication equipment; 106 GHz; 160 GHz; 30 Gbit/s; HBT decision circuits; InGaAs-InAlAs; heterojunction bipolar transistor; high data rates; master-slave D-flip-flop circuits; testing; Bit error rate; Circuit testing; Current density; Flip-flops; Heterojunction bipolar transistors; Indium phosphide; Master-slave; Optical fiber communication; Optical fiber devices; Optical fiber testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.700842
Filename
700842
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