Title :
The effect of different mechanism on the characteristics of SiC Schottky barrier diode
Author :
Zhang, Yimen ; Zhang, Yuming ; Wang, Yuehu ; Liang, Renrong
Author_Institution :
Inst. of Microelectron., Xidian Univ., China
Abstract :
A number of experiments demonstrate that the Schottky barrier height for Metal-SiC is different from the prediction of theory. Based on non-uniform barrier height assumption for metal-SiC contact, a numerical simulation with 2D simulator MEDICI is performed in this paper. The simulation results show that present model matches the experimental data very well. Patch defects make the Schottky barrier height decreased. This may give a reasonable explanation for the nonideal behaviors observed from many experiments. The effect of interface state density on Schottky barrier height is also discussed.
Keywords :
Schottky barriers; interface states; silicon compounds; wide band gap semiconductors; 2D simulator MEDICI; Schottky barrier height; SiC Schottky barrier diode; characteristics; interface state density; nonuniform barrier height assumption; Medical simulation; Numerical models; Numerical simulation; Poisson equations; Schottky barriers; Schottky diodes; Silicon carbide; Space charge; Temperature; Thermionic emission;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306786
