DocumentCode
3086111
Title
The simulation breakdown characteristic of 4H-SiC SBD with edge termination extension
Author
Lv, Hong-liang ; Zhang, Yi-Men ; Zhang, Yu-ming
Author_Institution
Inst. of Microelectron., Xidian Univ., China
fYear
2004
fDate
15-16 March 2004
Firstpage
183
Lastpage
185
Abstract
A numerical model for 4H-SiC Schottky barrier diode is presented in this paper and the breakdown performances are achieved. The influence of the edge termination extension on the breakdown characteristic is calculated and analyzed in detail.
Keywords
Schottky diodes; semiconductor device breakdown; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC SBD; Schottky barrier diode; breakdown performances; edge termination extension; simulation breakdown characteristic; Argon; Electric breakdown; Equations; Impact ionization; Ion implantation; Schottky barriers; Schottky diodes; Silicon carbide; Termination of employment; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN
0-7803-8191-2
Type
conf
DOI
10.1109/IWJT.2004.1306789
Filename
1306789
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